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VRRM IFAVM IFSM VF0 rF VDClink
= = = = = =
4500 320 5 2 1.5 2400
V A kA V m V
Fast Recovery Diode
5SDF 03D4501
Doc. No. 5SYA1106-02 Sep. 01
* Patented free-floating silicon technology * Low switching losses * Optimized to use as snubber and clamp diode in GTO and IGCT converters * Industry standard press-pack ceramic housing, hermetically cold-welded * Cosmic radiation withstand rating
Blocking
VRRM IRRM VDClink VDClink Repetitive peak reverse voltage Repetitive peak reverse current Permanent DC voltage for 100 FIT failure rate Permanent DC voltage for 100 FIT failure rate 4500 V 50 mA 2400 2800 V V Half sine wave, tP = 10 ms, f = 50 Hz VR = VRRM, Tj = 125C 100% Duty 5% Duty Ambient cosmic radiation at sea level in open air.
Mechanical data
Fm a Mounting force
(see Fig. 8)
min. max. 10 kN 12 kN
2 2
Acceleration:
Device unclamped Device clamped 50 m/s 200 m/s 0.25 kg 30 mm 20 mm
m DS Da
Weight Surface creepage distance Air strike distance
ABB Semiconductors AG reserves the right to change specifications without notice.
5SDF 03D4501
On-state (see Fig. 2, 3)
IFAVM IFRMS IFSM Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current oI2dt Max. surge current integral 320 A 500 A 5 kA 12 kA
2 125103 A s 2 72103 A s
Half sine wave, Tc = 85C
tp tp tp tp IF
= = = = =
10 ms 1 ms 10 ms 1 ms 1000 A
Before surge: Tc = Tj = 125C After surge: VR 0 V
VF VF0 rF
Forward voltage drop Threshold voltage Slope resistance
3.5 V 2V 1.5 m
Approximation for IF = 200...3000 A
Tj = 125C
Turn-on (see Fig. 4, 5)
Vfr Peak forward recovery voltage 140 V di/dt = 1000 A/s, Tj = 125C
Turn-off (see Fig. 6, 7)
Irr Qrr Err Reverse recovery current Reverse recovery charge Turn-off energy 200 A 1000 C -- J di/dt = 100 A/s, IF = 2000 A, RS = 22 , Tj = 125 C, VRM = 4500 V, CS = 0.22 F
Thermal (see Fig. 1)
Tj Tstg RthJC Operating junction temperature range Storage temperature range Thermal resistance junction to case RthCH Thermal resistance case to heatsink Analytical function for transient thermal impedance. -40...125C -40...125C 80 K/kW 80 K/kW 40 K/kW 16 K/kW 8 K/kW Anode side cooled Cathode side cooled Double side cooled Single side cooled Double side cooled Fm = 10... 12 kN
Z thJC (t) =
a
n
i
1 20.95 0.396
2 10.57 0.072
3 7.15 0.009
4 1.33 0.0044
R i (1 - e
- t / i
)
R i(K/kW)
i =1
i(s)
Fm = 10... 12 kN Double side cooled
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1106-02 Sep. 01 page 2 of 5
5SDF 03D4501
Fig. 1
Transient thermal impedance (junction-to-case) vs. time in analytical and graphical form (max. values).
Fig. 2
Forward current vs. forward voltage (typ. and max. values) and linear approximation of max. curve at 125C.
Fig. 3
Surge current and fusing integral vs. pulse width (max. values) for non-repetitive, halfsinusoidal surge current pulses.
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1106-02 Sep. 01 page 3 of 5
5SDF 03D4501
200 180 160 Vfr (V) 140 120 100 80 60 40 20 0 0 200 400 600 800 di/dt (A/s) 1000 25C 125C
Fig. 4
Typical forward voltage waveform when the diode is turned on with a high di/dt.
Fig. 5
Forward recovery voltage vs. turn-on di/dt (max. values).
Fig. 6
Typical current and voltage waveforms at turn-off with conventional RC snubber circuit.
Fig. 7
Reverse recovery current and reverse recovery charge vs. di/dt (max. values).
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1106-02 Sep. 01 page 4 of 5
5SDF 03D4501
Fig. 8
Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise.
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)62 888 6419 +41 (0)62 888 6306 abbsem@ch.abb.com www.abbsem.com
Doc. No. 5SYA1106-02 Sep. 01

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